Migration and Localization of Metal Atoms on Strained Graphene
Migration and Localization of Metal Atoms on Strained Graphene
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金属原子在应变石墨烯上的迁移和局域化
DOI：
10.1103/physrevlett.105.196102
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发表时间：
2010-11-05
影响因子：
8.6
通讯作者：
Banhart, Florian
中科院分区：
文献类型：
--
作者：
Cretu, Ovidiu;Krasheninnikov, Arkady V.;Banhart, Florian
石墨烯中的重建点缺陷是通过电子辐照和退火产生的。通过应用电子显微镜和密度泛函理论，表明这些缺陷周围的应变场深入到未受扰动的六边形网络，并且金属原子对石墨烯的非完美和应变区域具有高亲和力。金属原子被重建缺陷吸引并以约 2 eV 的能量结合。应变石墨烯中扭曲的π电子系统的反应性增加，使我们能够附着金属原子并调整石墨烯的性能。
Reconstructed point defects in graphene are created by electron irradiation and annealing. By applying electron microscopy and density functional theory, it is shown that the strain field around these defects reaches far into the unperturbed hexagonal network and that metal atoms have a high affinity to the nonperfect and strained regions of graphene. Metal atoms are attracted by reconstructed defects and bonded with energies of about 2 eV. The increased reactivity of the distorted pi-electron system in strained graphene allows us to attach metal atoms and to tailor the properties of graphene.