Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications
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DOI：
10.1063/1.1476395
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发表时间：
2002-04
影响因子：
4
通讯作者：
Yajun Wei;A. Gin;M. Razeghi;G. Brown
中科院分区：
文献类型：
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作者：
Yajun Wei;A. Gin;M. Razeghi;G. Brown
我们报告的温度依赖的非常长的波长红外II型InAs/GaSb超晶格为基础的光伏探测器的分子束外延生长的光响应。探测器的50%截止波长为18.8 μm，峰值电流响应度为4A/W（80 K）。在80 K，110 mV的反向偏压下，探测器的峰值探测率为4.5×1010 cm Hz 1/2/W。在80 K时，产生-复合寿命为0.4ns。截止波长随温度的升高而缓慢增加，在20 ~ 80 K范围内的净位移仅为1.2 μm。
We report on the temperature dependence of the photoresponse of very long wavelength infrared type-II InAs/GaSb superlattice based photovoltaic detectors grown by molecular-beam epitaxy. The detectors had a 50% cutoff wavelength of 18.8 μm and a peak current responsivity of 4 A/W at 80 K. A peak detectivity of 4.5×1010 cm Hz1/2/W was achieved at 80 K at a reverse bias of 110 mV. The generation–recombination lifetime was 0.4 ns at 80 K. The cutoff wavelength increased very slowly with increasing temperature with a net shift from 20 to 80 K of only 1.2 μm.