Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System
Growth of Bulk GaN Single Crystals Using Li-Na Mixed Flux System
复制标题
使用 Li-Na 混合助熔剂系统生长块状 GaN 单晶
DOI：
10.1143/jjap.42.l565
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Sasaki
中科院分区：
文献类型：
--
作者：
M. Morishita;F. Kawamura;Tomoya Iwahashi;M. Yoshimura;Y. Mori;T. Sasaki
我们发现在Li-Na通量体系中生长的GaN的产率要比在Na通量体系中生长的高得多。氮溶解随着Li的增加而增加，这促进了GaN晶体的生长。在本文中，我们报道了GaN的产率和习惯改变很大程度上取决于Li- na通量系统的组成，并且GaN可以在约50 atm的纯Li通量中生长。
We found the yield of GaN grown in a Li-Na flux system to be much higher than that grown in Na flux. Nitrogen dissolution seemed to increase with Li in solution, which promotes the growth of GaN crystals. In this paper, we report that the yield of GaN and habit modifications greatly depend on the composition of the Li-Na flux system and that GaN can be grown in a pure Li flux at about 50 atm.