Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs
Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs
复制标题
ICP-CVD SiN x 钝化膜中的应力对 AlGaN/GaN HEMT 漏电流的影响
DOI：
10.1049/el.2018.1097
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发表时间：
2018
影响因子：
1.1
通讯作者：
Cho S
中科院分区：
文献类型：
--
作者：
Cho S
报道了室温电感耦合等离子体化学气相沉积（ICP-CVD）氮化硅表面钝化层应力对AlGaN/GaN高电子迁移率晶体管（HEMTs）关态漏极（IDS-off）和栅漏电流（IGS）的影响，采用压应力双层氮化硅钝化方案，2 μm栅长器件的关态漏极和栅漏电流降低了4个数量级，达到10 pA/mm。此外，使用这种应变工程表面钝化方法，获得了Ion/Ioffof 1011和68 mV/dec的亚阈值斜率。
The impact of the stress in room temperature inductively coupled plasma chemical vapour deposited (ICP‐CVD) SiNxsurface passivation layers on off‐state drain (IDS‐off) and gate leakage currents (IGS) in AlGaN/GaN high electron mobility transistors (HEMTs) is reported.IDS‐offandIGSin 2 μm gate length devices were reduced by up to four orders of magnitude to ∼10 pA/mm using a compressively stressed bilayer SiNxpassivation scheme. In addition,Ion/Ioffof ∼1011and subthreshold slope of 68 mV/dec were obtained using this strain engineered surface passivation approach.