Photoelectrochemical Reactions of Electrodes Modified with Poly (3-hexylthiophene) Nanowires
Photoelectrochemical Reactions of Electrodes Modified with Poly (3-hexylthiophene) Nanowires
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聚(3-己基噻吩)纳米线修饰电极的光电化学反应
DOI：
10.1080/15421406.2011.563716
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
et al
中科院分区：
文献类型：
--
作者：
H.Yonemura;et al
用晶须沉淀法从聚(3-己基噻吩基)(P3HT)的苯甲醚溶液中制备了由区域规则的聚(3-己基噻吩基)(P3HT)组成的纳米线。在O2存在下，用P3HT纳米线或P3HT修饰的两个电极在可见光下产生阴极光电流。P3HT纳米线修饰电极的光电流约为P3HT修饰电极的两倍。这很可能是因为由于π-π堆积，P3HT纳米线中相邻的噻吩类分子之间的空穴跳跃变得容易。
Nanowires consisting of regioregular poly(3-hexylthiophene) (P3HT) were prepared by whisker precipitation from a solution of P3HT in anisole. Photoirradiation of two electrodes modified with P3HT nanowires or P3HT with visible light afforded cathodic photocurrents in the presence of O2. The photocurrent of the electrode modified with P3HT nanowires was approximately twice as large as that from the electrode modified with P3HT. This is most likely because hole hopping between adjacent thiophenes is facilitated in the P3HT nanowires due to π-π stacking.