Composition dependence of Au/InxAl1−xAs Schottky barrier heights
Composition dependence of Au/InxAl1−xAs Schottky barrier heights
复制标题
Au/InxAl1−xAs 肖特基势垒高度的成分依赖性
DOI：
10.1063/1.97290
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发表时间：
1986
期刊：
影响因子：
--
通讯作者：
E. Rezek
中科院分区：
文献类型：
--
作者：
Chern;P. Chu;A. L. Kellner;H. Wieder;E. Rezek
用分子束外延方法在n型(10 0)取向的InP衬底上生长了Si掺杂的InxAl1InxAs薄膜，测定了它们的表面势垒高度φBn和室温带隙Eg随组成的变化关系、内部光电发射、光致发光和双晶X射线摇摆曲线。
The surface barrier heights φbn and room‐temperature band gaps Eg of Si‐doped InxAl1−xAs layers grown by molecular beam epitaxy on n‐type (100) oriented InP substrates have been determined as a function of composition with capacitance versus voltage, internal photoemission, photoluminescence, and double‐crystal x‐ray rocking curve measurements for 0.45 0.78, n‐type surfaces might be accumulated and p‐type surfaces are likely to be inverted.