Broadband Enhancement of Spontaneous Emission in Two-Dimensional Semiconductors Using Photonic Hypercrystals
Broadband Enhancement of Spontaneous Emission in Two-Dimensional Semiconductors Using Photonic Hypercrystals
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DOI：
10.1021/acs.nanolett.6b01558
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发表时间：
2016-08-01
期刊：
影响因子：
10.8
通讯作者：
Menon, Vinod M.
中科院分区：
文献类型：
--
作者：
Galfsky, Tal;Sun, Zheng;Menon, Vinod M.
在过渡金属二硫属化物（TMD）的二维半导体中观察到的低量子产率激发了对可以增强来自这些系统的光发射的方法的探索。在这里，我们展示了宽带增强的自发辐射和增加拉曼签名从原型二维半导体：二硫化钼（MoS 2）和二硫化钨（WS 2）通过放置在近场的光子超晶体具有双曲色散的单层。超晶体的特征在于由于双曲色散而具有大的宽带光子态密度，同时通过亚波长光子晶体晶格具有增强的光输入/输出耦合。这种双重优势在这里被利用来增强来自2D TMD的光发射，并且可以用于开发使用二维半导体的光发射器和太阳能电池。
The low quantum yield observed in two-dimensional semiconductors of transition metal dichalcogenides (TMDs) has motivated the quest for approaches that can enhance the light emission from these systems. Here, we demonstrate broadband enhancement of spontaneous emission and increase in Raman signature from archetype two-dimensional semiconductors: molybdenum disulfide (MoS2) and tungsten disulfide (WS2) by placing the monolayers in the near field of a photonic hypercrystal having hyperbolic dispersion. Hypercrystals are characterized by a large broadband photonic density of states due to hyperbolic dispersion while having enhanced light in/out coupling by a subwavelength photonic crystal lattice. This dual advantage is exploited here to enhance the light emission from the 2D TMDs and can be utilized for developing light emitters and solar cells using two-dimensional semiconductors.