Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation
Improvement in gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors using microwave irradiation
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DOI：
10.1063/1.4902867
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发表时间：
2014-11-24
影响因子：
4
通讯作者：
Cho, Won-Ju
中科院分区：
文献类型：
--
作者：
Jo, Kwang-Won;Cho, Won-Ju
在这项研究中，我们评估了微波辐射（MWI）后沉积退火（PDA）处理对非晶铟镓锌氧化物薄膜晶体管（a-IGZO TFT）的栅极偏置应力不稳定性的影响，并与传统的热退火PDA处理的结果进行了比较。随着微波功率的增加，MWI-PDA处理的a-IGZO TFT表现出增强的电性能以及改善的长期稳定性。在拉伸指数方程上精确地建模了正导通电压偏移（Δ V-ON）作为具有正偏压和变化温度的应力时间的函数，表明电荷捕获是MWI-PDA处理的a-IGZO TFT的不稳定性中的主导机制。电子输运的特征捕获时间和平均有效势垒高度表明MWI-PDA处理有效地减少了a-IGZO TFT中的缺陷，从而导致对栅极偏置应力的上级电阻。(c)2014 AIP Publishing LLC.
In this study, we evaluated the effects of microwave irradiation (MWI) post-deposition-annealing (PDA) treatment on the gate bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) and compared the results with a conventional thermal annealing PDA treatment. The MWI-PDA-treated a-IGZO TFTs exhibited enhanced electrical performance as well as improved long-term stability with increasing microwave power. The positive turn-on voltage shift (Delta V-ON) as a function of stress time with positive bias and varying temperature was precisely modeled on a stretched-exponential equation, suggesting that charge trapping is a dominant mechanism in the instability of MWI-PDA-treated a-IGZO TFTs. The characteristic trapping time and average effective barrier height for electron transport indicate that the MWI-PDA treatment effectively reduces the defects in a-IGZO TFTs, resulting in a superior resistance against gate bias stress. (c) 2014 AIP Publishing LLC.