Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials
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DOI：
10.1063/1.3476352
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发表时间：
2010-08
影响因子：
4
通讯作者：
D. Donetsky;G. Belenky;S. Svensson;S. Suchalkin
中科院分区：
文献类型：
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作者：
D. Donetsky;G. Belenky;S. Svensson;S. Suchalkin
用光学调制响应技术测量了2型应变层超晶格（SLS）和长波Hg_（0.78）Cd_（0.22）Te（MCT）的少子寿命τ。结果表明，在77 K下，辐射复合可以对测量的τ值做出贡献。中波红外超晶格、长波红外（LWIR）超晶格和MCT的Shockley-Read-Hall（SRH）寿命分别达到100 ns、31 ns和1 μs以上。讨论了长波红外超晶格和MCT中SRH寿命差异的本质。
Minority carrier lifetime, τ, in type-2 strained-layer superlattices (SLSs) and in long-wave Hg0.78Cd0.22Te (MCT) was measured by optical modulation response technique. It was shown that at 77 K radiative recombination can contribute to the measured τ values. The Shockley–Read–Hall (SRH) lifetimes were attained as 100 ns, 31 ns, and more than 1 μs for midwave infrared superlattices, long-wave infrared (LWIR) superlattices, and MCT correspondingly. The nature of the difference between the SRH lifetimes in LWIR superlattice and MCT is discussed.