Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor

Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor
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采用 0.18 µm 互补金属氧化物半导体的低电压高速压控环形振荡器,具有宽调谐范围

DOI:
10.1143/jjap.50.04de11
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发表时间:
2011
影响因子:
1.5
通讯作者:
L. Tsao
L. Tsao
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Y. Tiao;Meng;L. Tsao

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本文提出了一种适用于宽调谐范围、高速的压控环形振荡器的CMOS差分延迟单元。采用互补电流控制方案的差分延迟单元不仅可以提高控制电压范围,还可以提高低压工作时的工作频率。使用新的延迟单元,采用三级结构和多通环路技术的环形压控振荡器在1.8 V电源电压下,在0.18µm单聚六金属(1P6M) CMOS工艺中实现,以实现宽调谐范围和高速。测量结果表明,在0 ~ 1.8 V全范围控制电压下,工作频率范围为8.36 ~ 1.29 GHz。当电源电压为1v时,工作频率为4.09 ~ 0.479 GHz,全量程控制电压为0 ~ 1v。在与8.35 GHz中心频率偏移1 MHz时,测量到的相位噪声为-100.22 dBc/Hz,性能因数(FOM)为-159.95 dBc/Hz。无PAD的芯片核心面积为106×76.2µm2。
A new complementary metal oxide semiconductor (CMOS) differential delay cell for a voltage-controlled ring oscillator with a wide tuning range and high speed is proposed in this paper. The new differential delay cell employing a complementary current control scheme can increase not only the control voltage range but also the operation frequency in low-voltage operation. Using the new delay cells, a ring voltage-controlled oscillator employing a three-stage structure and multiple-pass loop techniques is implemented in the 0.18 µm single-poly–six-metal (1P6M) CMOS process at a 1.8 V supply voltage to achieve a wide tuning range and high speed. Measured results show that a wide operation frequency range from 8.36 to 1.29 GHz is accomplished for the full-range control voltages from 0 to 1.8 V. When the supply voltage is 1 V, the operation frequencies are from 4.09 to 0.479 GHz for the full-range control voltages from 0 to 1 V. The measured phase noise is -100.22 dBc/Hz at 1 MHz offset from the 8.35 GHz center frequency and the figure of merit (FOM) is -159.95 dBc/Hz. The chip core area without PAD is 106×76.2 µm2.
采用 1/f 降噪技术的低电压、低相位噪声环形压控振荡器
DOI: --
发表时间: 2007
期刊: Japanese Journal of Applied Physics Vol. 46, No. 4
影响因子: --
作者:
T.;Yoshida;N.;Ishida;M.;Sasaki;A.;Iwata
通讯作者: Iwata