Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor
Low-Voltage and High-Speed Voltage-Controlled Ring Oscillator with Wide Tuning Range in 0.18 µm Complementary Metal Oxide Semiconductor
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采用 0.18 µm 互补金属氧化物半导体的低电压高速压控环形振荡器,具有宽调谐范围
DOI:
10.1143/jjap.50.04de11
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发表时间:
2011
影响因子:
1.5
通讯作者:
L. Tsao
中科院分区:
文献类型:
--
作者:
Y. Tiao;Meng;L. Tsao
A new complementary metal oxide semiconductor (CMOS) differential delay cell for a voltage-controlled ring oscillator with a wide tuning range and high speed is proposed in this paper. The new differential delay cell employing a complementary current control scheme can increase not only the control voltage range but also the operation frequency in low-voltage operation. Using the new delay cells, a ring voltage-controlled oscillator employing a three-stage structure and multiple-pass loop techniques is implemented in the 0.18 µm single-poly–six-metal (1P6M) CMOS process at a 1.8 V supply voltage to achieve a wide tuning range and high speed. Measured results show that a wide operation frequency range from 8.36 to 1.29 GHz is accomplished for the full-range control voltages from 0 to 1.8 V. When the supply voltage is 1 V, the operation frequencies are from 4.09 to 0.479 GHz for the full-range control voltages from 0 to 1 V. The measured phase noise is -100.22 dBc/Hz at 1 MHz offset from the 8.35 GHz center frequency and the figure of merit (FOM) is -159.95 dBc/Hz. The chip core area without PAD is 106×76.2 µm2.
DOI:
--
发表时间:
2007
期刊:
Japanese Journal of Applied Physics Vol. 46, No. 4
影响因子:
--
作者:
T.;Yoshida;N.;Ishida;M.;Sasaki;A.;Iwata
通讯作者:
Iwata