Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films
Effect of deposition conditions and post deposition anneal on reactively sputtered titanium nitride thin films
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DOI：
10.1016/j.tsf.2015.02.009
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发表时间：
2015-03-02
期刊：
影响因子：
2.1
通讯作者：
O'Neill, Anthony
中科院分区：
文献类型：
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作者：
Ponon, Nikhil K.;Appleby, Daniel J. R.;O'Neill, Anthony
氮化钛(TiNx)是在氮气气氛中用钛靶反应溅射沉积的。通过改变沉积过程中的氮气流量，研究了氮气流量对薄膜电阻率的影响。电导率随氮含量的增加而提高。然后对薄膜进行退火，改变退火的时间和温度。在沉积后退火过程中，电阻率随退火时间的延长和温度的升高而降低。TiNx薄膜在退火后表现出良好的热稳定性和电稳定性，没有表现出任何的硅扩散。研究发现，薄膜取向会影响薄膜的电阻率，[111]取向的薄膜比[200]取向的薄膜具有更大的电阻率。此外，沉积后退火带来的再结晶效应使薄膜的电阻率降低。当氮气流量超过20%时，沉积的薄膜均为化学计量比TiN。然而，在很高的氮气流量下沉积的TiNx在电学、热学和形态上都比在低氮气流量下沉积的TiNx更稳定。(C)2015年提交人。爱思唯尔出版公司(Elsevier B.V.)
Titaniumnitride (TiNx) was deposited by reactive sputtering using a titanium target in a nitrogen ambient. Nitrogen flow rate during deposition was varied in order to investigate its effect on film resistivity. Conductivity is found to improve with increasing nitrogen content. Films were then annealed, varying the time and temperature of the anneal. Resistivity was found to decrease with longer annealing time and higher temperature during post deposition annealing. TiNx films showed good thermal and electrical stability upon annealing and did not show any silicon diffusion. It was found that film orientation can influence the resistivity, with [ 111] oriented films more resistive than [200] oriented films. Moreover, re-crystallization effects brought on by post deposition annealing cause the resistivity to decrease. Films deposited above 20% nitrogen flow rates during deposition were all stoichiometric TiN. However, TiNx deposited at very high nitrogen flow rate was found to be electrically, thermally and morphologically more stable than the ones deposited at low nitrogen flow rates. (C) 2015 The Authors. Published by Elsevier B.V.