Hydrogen Promoted Copper Migration in the High Pressure Anneal Process
Hydrogen Promoted Copper Migration in the High Pressure Anneal Process
复制标题
高压退火过程中氢气促进铜迁移
DOI：
10.1143/jjap.40.2191
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发表时间：
2001
影响因子：
1.5
通讯作者：
Toshiki Sato
中科院分区：
文献类型：
--
作者：
T. Fujikawa;T. Yoshikawa;T. Ohnishi;Toshiki Sato
为了满足高压退火工艺（HiPA）中较低加工温度的要求，研究了物理气相沉积（PVD）加氢法制备Cu薄膜。高压充孔性能、晶粒生长、显微硬度测试和薄膜应力测试结果表明，氢的加入显著改变了Cu薄膜的性能。它在软化PVD-Cu薄膜和/或促进Cu原子扩散方面特别有效，这也促进了晶粒的生长。因此，加工温度可以降低到400℃左右，这是具有有机低k介电层的互连结构所允许的最高温度。
To meet the requirement of lower processing temperature in the high pressure anneal process (HiPA), Cu films deposited by physical vapor deposition (PVD) with addition of hydrogen were investigated. Experimental results on the hole filling performance under high pressure, the grain growth, the micro-hardness measurement and the film stress measurement revealed that the hydrogen addition markedly changes the properties of the Cu film. It is especially effective in softening the PVD-Cu film and/or in promoting the Cu atom diffusion which also promotes grain growth. As a result the processing temperature may be lowered down to around 400°C, which is the highest temperature allowable for the interconnection structures with organic low-k dielectric layers.