Heterostructures on silicon : one step further with silicon
Heterostructures on silicon : one step further with silicon
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硅上的异质结构：硅更进一步
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
E. Rosencher
中科院分区：
文献类型：
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作者：
Y. Nissim;E. Rosencher
在微电子逻辑电路领域，由于其技术的成就，硅的领导地位现已牢固确立。目前在工业上实现了在非常大的晶片（今天为6英寸，明天为8英寸）上的一百万个晶体管芯片的接近单位产量。硅相对于其它材料的优越性可以概括如下：-Si/Si 0界面是迄今为止获得的最完美的钝化界面（界面态密度小于10 - 1cm 2）-硅具有大的热导率，使得可以提拉大的晶体。- 硅是一种坚硬的材料，因此可以安全地处理大晶片。- 硅在高达1100 ℃的温度下是热稳定的，因此许多冶金操作（氧化、扩散、退火...）可以安全地实现。- 地球上有丰富的硅，所以基础硅片很便宜。不幸的是，由于材料特性，硅存在无法克服的基本限制：例如激光作用，红外检测，高迁移率。沉积和生长的新技术的发展为硅基结构开辟了新的可能性。硅的众所周知的特性现在可以扩展并适当地用于光电子、高速器件等领域的混合结构。这已经由MIT小组在1985年将GaAs发光二极管集成在硅基结构上开创。"
In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100 C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985."