Overcoming the black body limit in plasmonic and graphene near-field thermophotovoltaic systems
Overcoming the black body limit in plasmonic and graphene near-field thermophotovoltaic systems
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DOI：
10.1364/oe.20.00a366
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发表时间：
2012-05-07
期刊：
影响因子：
3.8
通讯作者：
Soljacic, Marin
中科院分区：
文献类型：
--
作者：
Ilic, Ognjen;Jablan, Marinko;Soljacic, Marin
具有精心定制的发射极-PV特性的近场热光伏（TPV）系统对于新的温度范围（600 - 1200 K）固态能量转换显示出巨大的希望，其中常规热电（TE）装置由于高温而不能操作，并且远场TPV方案遭受低效率和功率密度。我们提出了一个详细的理论研究的几种不同的实现方式的热发射器使用等离子体材料和石墨烯。我们发现，最佳的改善，超过黑体限制实现低带隙半导体和适当匹配的等离子体激元频率。对于纯等离子体发射体，理论预测的产生的功率密度为14 W/cm（2）和效率为36%，可以达到600 K（热侧），对于0.17eV的带隙（InSb）。发展有见地的近似，我们认为，大的等离子体激元损失可以，与直觉相反，有助于提高整体近场转移。我们讨论和量化的最佳近场光伏（PV）二极管的属性。此外，我们研究了石墨烯中的等离子体激元，并表明掺杂可用于调节等离子体激元色散关系以匹配PV电池bangap。在石墨烯的情况下，对于0.17eV的带隙，在600（1200）K下可以实现理论预测的6（120）W/cm（2）的产生功率密度和35（40）%的效率。近场TPV系统能够在中温范围内工作，并且具有高效率和功率密度，因此有可能补充传统的TE和TPV固态热电转换设备。(C)2012美国光学学会
Near-field thermophotovoltaic (TPV) systems with carefully tailored emitter-PV properties show large promise for a new temperature range (600 - 1200K) solid state energy conversion, where conventional thermoelectric (TE) devices cannot operate due to high temperatures and far-field TPV schemes suffer from low efficiency and power density. We present a detailed theoretical study of several different implementations of thermal emitters using plasmonic materials and graphene. We find that optimal improvements over the black body limit are achieved for low bandgap semiconductors and properly matched plasmonic frequencies. For a pure plasmonic emitter, theoretically predicted generated power density of 14 W/cm(2) and efficiency of 36% can be achieved at 600K (hot-side), for 0.17eV bandgap (InSb). Developing insightful approximations, we argue that large plasmonic losses can, contrary to intuition, be helpful in enhancing the overall near-field transfer. We discuss and quantify the properties of an optimal near-field photovoltaic (PV) diode. In addition, we study plasmons in graphene and show that doping can be used to tune the plasmonic dispersion relation to match the PV cell bangap. In case of graphene, theoretically predicted generated power density of 6(120) W/cm(2) and efficiency of 35(40)% can be achieved at 600(1200)K, for 0.17eV bandgap. With the ability to operate in intermediate temperature range, as well as high efficiency and power density, near-field TPV systems have the potential to complement conventional TE and TPV solid state heat-to-electricity conversion devices. (C) 2012 Optical Society of America