Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells
Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells
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DOI：
10.1063/1.4974297
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发表时间：
2017-01-16
影响因子：
4
通讯作者：
Speck, James S.
中科院分区：
文献类型：
--
作者：
Ivanov, Ruslan;Marcinkevicius, Saulius;Speck, James S.
采用时间分辨扫描近场光致发光（PL）光谱技术绘制了生长在顺轴和错切基底上的宽m平面InGaN/GaN量子阱中的载流子寿命。发现辐射和非辐射寿命在空间上都是不均匀的。与轴上衬底相比，在错切上生长的量子阱的寿命变化较小。与表面形貌的相关性表明，复合时间的最大偏差出现在轴上样品的金字塔丘的+c面。观察到的辐射寿命与PL峰波长之间的相关性被分配到部分电子局域化。AIP出版社出版。
Time-resolved scanning near-field photoluminescence (PL) spectroscopy was applied to map carrier lifetimes in wide m-plane InGaN/GaN quantum wells grown on on-axis and miscut substrates. Both radiative and nonradiative lifetimes were found to be spatially nonuniform. Lifetime variations were smaller for quantum wells grown on miscut, as compared to on-axis substrates. Correlation with surface topography showed that largest deviations of recombination times occur at +c planes of pyramidal hillocks of the on-axis sample. Observed correlation between radiative lifetimes and PL peak wavelength was assigned to a partial electron localization. Published by AIP Publishing.