High-efficiency photon capturing in ultrathin silicon solar cells with double-sided skewed nanopyramid arrays

High-efficiency photon capturing in ultrathin silicon solar cells with double-sided skewed nanopyramid arrays
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双面倾斜纳米金字塔阵列超薄硅太阳能电池的高效光子捕获

DOI:
10.1088/2040-8986/aa7ea1
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发表时间:
2017-10-01
期刊:
影响因子:
2.1
通讯作者:
Yang, Fuhua
Yang, Fuhua
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Zhang, Shuyuan;Liu, Min;Yang, Fuhua

文献摘要

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光捕获是提高薄膜太阳能电池性能的关键。在本文中,我们对双面倾斜纳米棱锥体阵列进行了参数优化,该阵列作为一种光捕获方案来增加薄膜c-Si太阳电池的光吸收。我们的理论优化表明,仅使用1mum的硅,太阳电池的短路电流密度就可以达到38.57µA cm(-2),分别比Yablonovitch极限和平面薄膜电池的短路电流密度高17%和245%。此外,我们还通过电场强度分布分析了光吸收增强的物理基础。
Light trapping is essential to improve the performance of thin film solar cells. In this paper, we performed a parametric optimization of double-sided skewed nanopyramid arrays that act as a light trapping scheme to increase light absorption in thin-film c-Si solar cells. Our theoretical optimization reveals that the short-circuit current density in a solar cell, employing only 1 mu m silicon could reach as high as 38.57 mu A cm(-2), which is 17% and 245% higher than that of the Yablonovitch limit and planar-film counterparts, respectively. Furthermore, we analyzed the underlying physics of the light absorption enhancement through electric field intensity profiles.