High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing
High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing
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DOI：
10.1109/led.2002.807019
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发表时间：
2003-03
影响因子：
4.9
通讯作者：
Soo Young Yoon;N. Young;P. J. van der Zaag;D. Mcculloch
中科院分区：
文献类型：
--
作者：
Soo Young Yoon;N. Young;P. J. van der Zaag;D. Mcculloch
高性能多晶硅薄膜晶体管（TFT）的制造采用金属诱导结晶激光退火（L-MIC）。MIC后的激光退火被发现产生一个重大的改善多晶硅TFT的电特性。在330 mJ/cm/sup 2/的激光能量密度下，场效应迁移率从71 cm/sup 2//Vs增加到239 cm/sup 2//Vs，并且在5 V的漏极电压下，最小漏电流从约3.0/spl乘以/10/sup-12/ A//spl μ/m减小到2.9/spl乘以/10/sup-13/ A//spl μ/m。此外，TFT特性对激光能量密度的依赖性比常规受激准分子激光退火的多晶硅TFT的依赖性弱得多。
High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been fabricated using metal-induced crystallization followed by laser annealing (L-MIC). Laser annealing after MIC was found to yield a major improvement to the electrical characteristics of poly-Si TFTs. At a laser fluence of 330 mJ/cm/sup 2/, the field effect mobility increased from 71 to 239 cm/sup 2//Vs, and the minimum leakage current reduced from around 3.0/spl times/10/sup -12/ A//spl mu/m to 2.9/spl times/10/sup -13/ A//spl mu/m at a drain voltage of 5 V. In addition, the dependence of the TFT characteristics on the laser energy density was much weaker than that for conventional excimer laser annealed poly-Si TFTs.