Circuit simulation for Nano-Electro-Mechanical switches VLSI circuits
Circuit simulation for Nano-Electro-Mechanical switches VLSI circuits
复制标题
纳米机电开关 VLSI 电路的电路仿真
DOI：
10.1109/mwscas.2010.5548872
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
M. Tabib
中科院分区：
文献类型：
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作者：
K. Alzoubi;D. Saab;M. Tabib
为了准确地模拟纳米机电开关（NEM）电路的行为，需要在电路仿真环境中忠实地再现NEMS器件特性的NEM电路仿真模型。在本文中，我们提出了一个精确的NEMS电路仿真模型。该模型基于三维有限元分析（FEA）物理器械，可捕获器械多物理场现象。NEMS电路仿真模型使用电路仿真技术再现了3D FEA模型的相同特性。以这种方式，3D FEA物理器件模型用于导出和校准NEMS电路仿真模型。为了评估模型的准确性，该模型是在电路仿真器中实现的。NEM电路模拟器使NEMS电路的评估具有与3D FEA物理器件模型相同的精度，但在CPU时间和内存需求方面的成本要低得多。在本文中，我们提出了一个精确的NEMS电路模型推导和NEMS电路模拟器。该仿真器能够在可接受的CPU时间和内存要求下，以与FEA相同的精度仿真较大的NEMS电路。
To accurately simulate the behavior of Nano-Electro- Mechanical Switch (NEM) circuits, a NEM circuit simulation model that faithfully reproduces the NEMS device characteristics in a circuit simulation environment is needed. In this paper, we present an accurate NEMS circuit simulation model. The model is based on the 3D Finite Element Analysis (FEA) physical device that captures the device multiphysics phenomena. The NEMS circuit simulation model reproduces the same characteristics of the 3D FEA model using circuit simulation techniques. In this way, the 3D FEA physical device model is used to derive and calibrate the NEMS circuit simulation model. To evaluate the accuracy of the model, the model is implemented in a circuit simulator. The NEM circuit simulator enables the evaluation of NEMS circuit with the same accuracy of the 3D FEA physical device model at much lower cost in terms of CPU time and memory requirement. In this paper, we present an accurate NEMS circuit model derivation and a NEMS circuit simulator. The simulator is able to simulate larger NEMS circuits with the same accuracy as the FEA at an acceptable CPU time and memory requirement.
功能性 NEMS 栅极 MOSFET 和 SET 的 3D 设计和分析
DOI：
--
发表时间：
2007
期刊：
IEEE Transactions on Nanotechnology 6(2)
影响因子：
--
作者：
B. Pruvost;H. Mizuta;S. Oda
通讯作者：
S. Oda