Thermal Rectification Enabled by Near-Field Radiative Heat Transfer Between Intrinsic Silicon and a Dissimilar Material

Thermal Rectification Enabled by Near-Field Radiative Heat Transfer Between Intrinsic Silicon and a Dissimilar Material
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DOI:
10.1080/15567265.2013.776154
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发表时间:
2013-11-01
影响因子:
4.1
通讯作者:
Zhang, Z. M.
Zhang, Z. M.
中科院分区:
工程技术3区
文献类型:
--
作者:
Wang, L. P.;Zhang, Z. M.

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近年来,热整流技术因其能使热量沿一定方向流动,在热管理和能源系统中有着广阔的应用前景而受到人们的广泛关注。除了声子工程,光子输运在近场制度最近已被提出来实现平面结构之间的热整流。在本研究中,热整流效应使本征硅和其他材料之间的近场热辐射进行了研究,在不同的温度和真空间隙距离。在1000和300 K的温度下,在5nm的真空间隙下,可以实现本征Si和掺杂Si之间的强热整流(整流R=2.7)以及本征Si和SiO2之间的强热整流(R=9.9)。对于前一种配置,在亚10 nm真空间隙中可以获得大于1的整流,对于后一种配置,在亚20 nm间隙中可以获得大于1的整流。由金和本征Si制成的热整流器示出具有整流因子约0.85,温度为600和300 K,在宽范围的真空间隙从100到500 nm。阐明了这三种结构中整流效应的物理机制,并指出每种热整流器在不同温度和真空距离下的应用中各有优势。
Thermal rectification has recently attracted great attention because it could allow heat to flow in a preferred direction and may have promising applications in thermal management and energy systems. In addition to phonon engineering, photon transport at the near-field regime has been recently proposed to realize thermal rectification between planar structures. In the present study, the thermal rectification effect enabled by near-field thermal radiation between intrinsic silicon and other materials was investigated at various temperatures and vacuum gap distances. Strong thermal rectification between intrinsic Si and doped Si (rectification R=2.7) and between intrinsic Si and SiO2 (R=9.9) can be achieved with a 5 nm vacuum gap at temperatures of 1000 and 300 K. Rectification larger than one can be obtained in sub-10 nm vacuum gaps for the former configuration and sub-20 nm gaps for the latter configuration. A thermal rectifier made of gold and intrinsic Si is shown to have a rectification factor around 0.85 with temperatures of 600 and 300 K at a wide range of vacuum gaps from 100 to 500 nm. The physical mechanisms of the rectification effect in the three configurations are elucidated, and each of the proposed thermal rectifiers may have its own advantage for applications dealing with different temperatures and vacuum distances.