Electrically detected magnetic resonance investigations of gallium phosphide green light‐emitting diodes

Electrically detected magnetic resonance investigations of gallium phosphide green light‐emitting diodes
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磷化镓绿光发光二极管的电检测磁共振研究

DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
M. Stutzmann
M. Stutzmann
中科院分区：
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文献类型：
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作者：
N. Reinacher;M. Brandt;M. Stutzmann

文献摘要

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用电检测磁共振(EDMR)研究了GaP：N绿色发光二极管的输运过程和退化过程。在电流退化后的低温下，可以观察到g=1.996，线宽Δ=68G的各向同性EDMR信号。该信号表现出T−2温度依赖关系，表明自旋弛豫过程比相应的输运步骤快。从可能的退化机制方面分析了EDMR信号的微观来源--最有可能在p-n界面附近的n型掺杂相关缺陷处复合。
Transport processes and degradation of GaP:N green light‐emitting diodes have been investigated using electrically detected magnetic resonance (EDMR). An isotropic EDMR signal with a g value of g=1.996 and a linewidth of ΔHpp=68 G can be observed at low temperatures after current degradation. The signal exhibits a T−2 temperature dependence indicating a spin relaxation process faster than the relevant transport step. The microscopic origin of the EDMR signal—most probably recombination at a n‐type dopant‐related defect near the p–n interface—is analyzed with respect to possible degradation mechanisms.