InGaN-GaN multiquantum-well blue and green light-emitting diodes
InGaN-GaN multiquantum-well blue and green light-emitting diodes
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DOI：
10.1109/2944.999181
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发表时间：
2002-03-01
影响因子：
4.9
通讯作者：
Liaw, UH
中科院分区：
文献类型：
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作者：
Chang, SJ;Lai, WC;Liaw, UH
采用有机金属气相外延技术制备了InGaN-GaN多量子阱蓝绿发光二极管(LED)，并通过光致发光(PL)、双晶X射线衍射和电致发光(EL)测试对其性能进行了表征。结果表明，随着量子阱数目的增加，蓝光MQW发光二极管的光致发光峰和电致发光峰位置仅发生微小的移动。然而，随着量子阱个数的增加，绿色多量子阱发光二极管的发光和电致发光峰位置发生了显著的移动。研究还发现，在大电流注入下，蓝光多量子阱LED的电致发光峰位置发生了较大的蓝移。然而，当注入电流较大时，绿色多量子阱LED的蓝移可以忽略不计。这些观察结果都可以归因于绿色多量子阱LED的快速弛豫，因为对于绿色多量子阱LED来说，InGaN势垒中的In组分比很高。由于同样的原因，绿色多量子阱LED的正向电压V-f也大于蓝色多量子阱LDDS的正向电压。
InGaN-GaN multiquantum-well (MQW) blue and green light-emitting diodes (LEDs) were prepared by organometallic vapor phase epitaxy, and the properties of these LEDs were evaluated by photoluminescence (PL), double crystal X-ray diffraction, and electroluminescence (EL) measurements. It was found that there were only small shifts observed in PL and EL peak positions of the blue MQW LEDs when the number of quantum well (QW) increased. However, significant shifts in PL and EL peak positions were observed in green MQW LEDs when the number of QW increased. It was also found that there was a large blue shift in EL peak position under high current injection in blue MQW LEDs. However, the blue shift in green MQW LEDs was negligibly small when the injection current was large. These observations could all be attributed to the rapid relaxation in green MQW LEDs since the In composition ratio in the InGaN well was high for the green MQW LEDs. The forward voltage V-f of green MQW LEDs was also found to be larger than that of blue MQW LDDs due to the same reason.