Easy moment direction and antiferromagnetic domain wall motion in Mn2Au
Easy moment direction and antiferromagnetic domain wall motion in Mn2Au
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DOI：
10.1016/j.jmmm.2015.07.101
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发表时间：
2016-05-15
影响因子：
2.7
通讯作者：
Givord, Dominique
中科院分区：
文献类型：
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作者：
Barthem, Vitoria M. T. S.;Colin, Claire V.;Givord, Dominique
在自旋电子学器件中赋予反铁磁（AFM）材料有源函数的兴趣最近得到了实现。Mn2Au是一种高温反铁磁体，具有较大的Mn矩，位于四边形结构平面上。为了确定Mn2Au中矩的方向，我们展示了一种原始的方法，它应该是平面AFM材料的通用方法。它涉及颗粒样品绕垂直于外加磁场的轴旋转。易矩方向族< 110 >。对于不旋转的晶粒，主要的磁化过程是AFM畴壁运动。在自旋电子器件中可以引入Mn2Au纳米元件，在适度的外部激励下，Mn矩可以被切换。(C) 2015 Elsevier B.V.版权所有
The interest of giving active functions to antiferromagnetic (AFM) materials in spintronics devices has been realized recently. Mn2Au is a high-Neel temperature antiferromagnet with large Mn moment, lying in plane of the tetragonal structure. To determine the direction of the moments in Mn2Au, an original approach is demonstrated, which should be generic to planar AFM materials. It involves the rotation of the granular sample around an axis perpendicular to the applied magnetic field. The family of easy moment directions is < 110 >. For grains prevented from rotating, the dominant magnetization process is AFM domain wall motion. Textured Mn2Au nanoelements could be introduced in spintronics devices, in which the Mn moments would be switched under modest external excitation. (C) 2015 Elsevier B.V. All rights reserved.