Predicted maximum mobility in bulk GaN
Predicted maximum mobility in bulk GaN
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DOI：
10.1063/1.1394954
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发表时间：
2001-08-20
影响因子：
4
通讯作者：
Sizelove, JR
中科院分区：
文献类型：
--
作者：
Look, DC;Sizelove, JR
在自支撑GaN中测得300 K的体（三维）迁移率为1245 cm（2）/Vs。对该特定样品的温度依赖性霍尔效应数据进行拟合，以获得未知的晶格散射参数，以及浅施主（N-D）和受主（N-A）浓度，其为N-D=6.7x10（15）cm（-3）和N-A=1.7x10（15）cm（-3）。然后通过假设N-D和N-A的两个数量级的较低值获得在体GaN中可获得的最大迁移率的实际值，导致最大300 K迁移率为1350 cm（2）/V s，最大77 K迁移率为19 200 cm（2）/V s。(C)2001年美国物理学会。
A 300 K bulk (three-dimensional) mobility of 1245 cm(2)/V s has been measured in free-standing GaN. Temperature-dependent Hall-effect data on this particular sample are fitted to obtain unknown lattice-scattering parameters, as well as shallow donor (N-D) and acceptor (N-A) concentrations, which are N-D=6.7x10(15) and N-A=1.7x10(15) cm(-3). Realistic values of the maximum mobility attainable in bulk GaN are then obtained by assuming two-orders-of-magnitude lower values of N-D and N-A, leading to a maximum 300 K mobility of 1350 cm(2)/V s, and a maximum 77 K mobility of 19 200 cm(2)/V s. (C) 2001 American Institute of Physics.