THEORY OF DONOR STATES IN SILICON
THEORY OF DONOR STATES IN SILICON
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DOI：
10.1103/physrev.98.915
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发表时间：
1955-01-01
期刊：
影响因子：
--
通讯作者：
LUTTINGER, JM
中科院分区：
文献类型：
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作者：
KOHN, W;LUTTINGER, JM
利用最近测量的n型Si的有效质量m1 = 0.98 m和m2 = 0.19 m，得到了有效质量薛定谔方程的近似解。在m 2 m 1= 1和0的极限情况下，对解的准确性进行了检验。考虑到硅的导带有六个等效的极小值，详细讨论了所得到态的性质及其简并度。实验测量的电离能表明，在基态的情况下，有效质量理论存在严重的误差。这一误差是由于有效质量理论在供体核附近的失效造成的，在高能级的情况下考虑了这一失效。这最终导致了由P、As或Sb给体束缚的电子的理论谱。
By using the recently measured effective masses for n-type Si, m 1= 0.98 m and m 2= 0.19 m, approximate solutions of the resulting effective mass Schroedinger equation are obtained. The accuracy of the solutions was tested in the limiting cases where m 2 m 1= 1 and 0 respectively. The nature of the resulting states and their degeneracy is discussed in some detail, taking into account the fact that the conduction band of Si has six equivalent minima. Experimentally measured ionization energies show that the effective mass theory is seriously in error in the case of the ground state. This error is attributed to failure of the effective mass theory near the donor nucleus, and allowance for this failure is made in the case of higher states. This leads finally to a theoretical spectrum for the electrons bound by P, As, or Sb donors.