Complementary logic gates and ring oscillators on plastic substrates by use of printed ribbons of single-crystalline silicon
Complementary logic gates and ring oscillators on plastic substrates by use of printed ribbons of single-crystalline silicon
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DOI：
10.1109/led.2007.910770
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发表时间：
2008-01-01
影响因子：
4.9
通讯作者：
Rogers, John A.
中科院分区：
文献类型：
--
作者：
Kim, Dae-Hyeong;Ahn, Jong-Hyun;Rogers, John A.
通过转移印刷p型和n型硅单晶带，在柔性塑料基板上形成了CMOS反相器和三级环形振荡器。在电源电压为5 V时，反相器的增益和高低噪声裕度之和分别高达150 V和4.5 V。环形振荡器的频率在10 V的电源电压下达到2.6 MHz。这些结果是用具有相对大的临界尺寸（即，沟道长度在几微米范围内），以及良好的机械可弯曲性，表明这种类型的技术有希望用于柔性电子系统。
CMOS inverters and three-stage ring oscillators were formed on flexible plastic substrates by transfer printing of p-type and n-type single crystalline ribbons of silicon. The gain and the sum of high and low noise margins of the inverters were as high as similar to 150 and 4.5 V at supply voltages of 5 V, respectively. The frequencies of the ring oscillators reached 2.6 MHz at supply voltages of 10 V. These results, as obtained with devices that have relatively large critical dimensions (i.e., channel lengths in the several micrometer range), taken together with good mechanical bendability, suggest promise for the use of this type of technology for flexible electronic systems.