Photoluminescence in erbium-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films
Photoluminescence in erbium-doped Pb(Mg1/3Nb2/3)O3–PbTiO3 thin films
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DOI：
10.1063/1.125299
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发表时间：
1999-11
影响因子：
4
通讯作者：
Jian-Wu Zheng;Yalin Lu;Xuesheng Chen;M. Cronin-Golomb;J. Zhao
中科院分区：
文献类型：
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作者：
Jian-Wu Zheng;Yalin Lu;Xuesheng Chen;M. Cronin-Golomb;J. Zhao
在（10 12）蓝宝石衬底上生长了掺铒Pb（Mg 1/3 Nb 2/3）O3-PbTiO 3（PMN-PT）薄膜，旨在开发一种兼具大电光效应和激光或放大功能的有源光学材料。在室温下观察到1.54 μm附近的Er 3 + 4f壳层内发射，当Er含量大于0.5mol%时，出现成分猝灭。在PMN-PT中引入Er降低了EO效应，但EO系数仍保持在合理的值，在Er含量为0.5mol%时约为0.4×10−16（m/V）2。这些结果表明，Er ~（3+）掺杂PMN-PT是一种潜在的集成光学有源器件。
Erbium-doped Pb(Mg1/3Nb2/3)O3–PbTiO3(PMN–PT) thin films were grown on (10 12) sapphire substrate with a purpose of developing an active optical material combining both the large electro-optic (EO) effect and lasing or amplification functions. Strong characteristic Er3+ intra-4f shell emission around 1.54 μm is observed at room temperature and a compositional quenching occurred at where the Er content is larger than 0.5 mol %. The introduction of Er in PMN–PT decreased the EO effect, but the EO coefficient still maintain a reasonable value, which is about 0.4×10−16 (m/V)2 at Er content of 0.5 mol %. These results indicate that Er3+-doped PMN–PT can be a potential candidate for integrated optic active devices.