Control of Electrical Resistivity in Silicon Carbide Ceramics Sintered with Aluminum Nitride and Yttria
Control of Electrical Resistivity in Silicon Carbide Ceramics Sintered with Aluminum Nitride and Yttria
复制标题
氮化铝和氧化钇烧结碳化硅陶瓷电阻率的控制
DOI：
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Young‐Wook Kim
中科院分区：
文献类型：
--
作者：
K. Kim;K. Lim;Young‐Wook Kim
通过AlN-Y_2 O_3共掺杂，β-SiC陶瓷的电学性能可调。以AlN和Y2 O3为烧结助剂，在氮气气氛中热压SiC粉末，制备了多晶β-SiC样品。SiC样品的电阻率随AlN掺杂的增加而增加，随Y2 O3掺杂的增加而降低，样品具有n型特征。电阻率的增加归因于Al衍生的受主捕获从N衍生的施主激发的载流子。结果表明，通过控制两种杂质态的补偿，β-SiC陶瓷的电阻率可以在104-10−3 Ω·cm范围内变化。发现样品的光致发光（PL）光谱随着掺杂剂的加入而演变。通过分析3C-SiC的PL数据可以确定在3C-SiC的带隙内存在N-施主态和Al-受主态。
The electrical properties of β-SiC ceramics were found to be adjustable through appropriate AlN–Y2O3 codoping. Polycrystalline β-SiC specimens were obtained by hot pressing silicon carbide (SiC) powder mixtures containing AlN and Y2O3 as sintering additives in a nitrogen atmosphere. The electrical resistivity of the SiC specimens, which exhibited n-type character, increased with AlN doping and decreased with Y2O3 doping. The increase in resistivity is attributed to Al-derived acceptors trapping carriers excited from the N-derived donors. The results suggest that the electrical resistivity of the β-SiC ceramics may be varied in the 104–10−3 Ω·cm range by manipulating the compensation of the two impurity states. The photoluminescence (PL) spectrum of the specimens was found to evolve with the addition of dopants. The presence of N-donor and Al-acceptor states within the band gap of 3C–SiC could be identified by analyzing the PL data.
DOI：
10.1002/maco.201106283
发表时间：
2013
期刊：
Materials and Corrosion
影响因子：
--
作者：
Herrmann;Kleebe;Michaelis
通讯作者：
Michaelis
影响因子：
5.7
作者：
E. Zschippang;H. Klemm;M. Herrmann;K. Sempf;U. Guth;A. Michaelis
通讯作者：
E. Zschippang;H. Klemm;M. Herrmann;K. Sempf;U. Guth;A. Michaelis