Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode
Emission characteristics of a GaAs wedge emitter monolithically fabricated with an air bridge and a cantilever anode
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采用空气桥和悬臂阳极单片制造的 GaAs 楔形发射器的发射特性
DOI：
10.1116/1.1524139
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发表时间：
2003
影响因子：
1.4
通讯作者：
H. Hartnagel
中科院分区：
文献类型：
--
作者：
H. Mimura;O. Yilmazoglu;H. Shimawaki;K. Yokoo;K. Mutamba;H. Hartnagel
具有空气桥阳极和悬臂阳极的砷化镓楔形发射器是使用微加工技术单片制造的。发射极与空气桥阳极之间的二极管的电子发射阈值电压约为8 V，而发射极与悬臂阳极之间的二极管的电子发射阈值电压仅为1.5 V。空气桥二极管的电流-电压特性归因于场发射，而悬臂二极管的电流-电压特性被认为是电子通过静电力通过发射极和悬臂之间减小的气隙直接隧道效应。
GaAs wedge emitters with an air bridge anode and a cantilever anode were monolithically fabricated using a micromachining technique. The threshold voltage of electron emission is about 8 V for the diode between the emitter and the air bridge anode, while only 1.5 V for the diode between the emitter and the cantilever anode. The current–voltage characteristic of the air bridge diode is due to a field emission, on the other hand, that of the cantilever diode is recognized as a direct tunneling of electrons through the reduced air gap between the emitter and the cantilever by electrostatic force.