First demonstration of "Leaky Integrate and Fire" artificial neuron behavior on (V0.95Cr0.05)2O3 thin film
First demonstration of "Leaky Integrate and Fire" artificial neuron behavior on (V0.95Cr0.05)2O3 thin film
复制标题
DOI：
10.1557/mrc.2018.90
复制
发表时间：
2018-09-01
影响因子：
1.9
通讯作者：
Corraze, Benoit
中科院分区：
文献类型：
--
作者：
Adda, Coline;Cario, Laurent;Corraze, Benoit
神经计算领域的一大挑战是通过在硬件中直接实现人工突触和神经元来模拟大脑行为。这项工作表明，用Mott绝缘体薄膜制成的两端器件可以实现漏电积分和火灾(LIF)人工神经元。采用磁控溅射法沉积了著名的Mott绝缘氧化物(V0.95Cr0.05)(2)O-3多晶薄膜，并用微米级TiN电极进行了图形化处理。这些器件在一系列脉冲下表现出挥发性的电阻开关和显著的LIF行为，这表明LIF人工神经元可以由(V0.95Cr0.05)(2)O-3薄膜实现。
A great challenge in the field of neurocomputing is to mimic the brain behavior by implementing artificial synapses and neurons directly in hardware. This work shows that a Leaky Integrate and Fire (LIF) artificial neuron can be realized with a two-terminal device made of Mott insulator thin films. Polycrystalline thin films of the well-known Mott insulator oxide (V0.95Cr0.05)(2)O-3 were deposited by magnetron sputtering and patterned with micron-scale TIN electrodes. These devices exhibit a volatile resistive switching and a remarkable LIF behavior under a train of pulses suggesting that LIF artificial neurons may be realized from (V0.95Cr0.05)(2)O-3 thin films.