Metallurgical microstructure control in metal-silicon reactions
Metallurgical microstructure control in metal-silicon reactions
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DOI：
10.1007/s11431-014-5470-z
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
K. Tu;Wei Tang
中科院分区：
文献类型：
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作者：
K. Tu;Wei Tang
综述了金属与硅纳米线或硅晶片之间形成硅化物的界面反应。在Si晶片或Si纳米线上形成硅化物接触是制造基于电流的Si器件所需的构建块。因此，基于成核和生长动力学的硅化物形成的微结构控制在微电子技术中具有相关的应用。本文介绍了原子层反应中Ni和Co在Si上外延硅化物的均匀成核的重复事件。分析了扩散控制层状金属间化合物Ni2Si生长过程中化学作用对本征扩散系数的影响。
A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given. Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices. Thus, the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology. Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented. The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.