Pentacene field-effect transistors with a laminated Mylar™ foil as gate dielectric
Pentacene field-effect transistors with a laminated Mylar™ foil as gate dielectric
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DOI：
10.1063/1.2402901
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发表时间：
2006-12-04
影响因子：
4
通讯作者：
Tardy, Jacques
中科院分区：
文献类型：
--
作者：
Diallo, Karim;Erouel, Mohsen;Tardy, Jacques
这项工作报告并五苯为基础的有机场效应晶体管的栅极电介质制成的薄膜薄膜的Mylar（TM）转移层压工艺在中等温度下。本文所述的工艺实现了底栅和顶栅晶体管的工艺，从而证明了将介电膜层压到有机半导体上的可行性。此外，作者指出了有机/绝缘体界面的重要性，在底栅器件的情况下，在并五苯层蒸发之前，通过在聚酯薄膜上有利地沉积聚甲基丙烯酸甲酯层。给出了与具有旋涂有机电介质的器件的比较。(c)2006年，美国物理学会。
This work reports on pentacene based organic field-effect transistors with a gate dielectric made of a thin foil of Mylar (TM) transferred by a lamination process at moderate temperature. The process described here enabled the process of both bottom and top gate transistors, thus demonstrating the feasibility of laminating a dielectric film onto an organic semiconductor. Furthermore the authors point out the importance of the organic/insulator interface through the beneficial deposition of polymethyl methacrylate layer on the Mylar before evaporation of the pentacene layer in the case of bottom gate devices. A comparison is given with devices having a spun on organic dielectric. (c) 2006 American Institute of Physics.