Symmetry and stability of solitary dimer rows on Si(100).
Symmetry and stability of solitary dimer rows on Si(100).
复制标题
Si(100) 上孤立二聚体行的对称性和稳定性。
DOI：
10.1103/physrevlett.70.2589
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发表时间：
1993
影响因子：
8.6
通讯作者：
Kaxiras
中科院分区：
文献类型：
--
作者：
Bedrossian;Kaxiras
亚稳态，单层高结构作为一个二聚体行窄，只要衬底的平台宽度装饰反相界Si（100）以下225 eV的轰击。在隧道显微镜STM观测和第一性原理计算的基础上，我们提出反相边界上的屈曲二聚体行的键合拓扑是这种拉链结构的亚稳性的原因，进而是生长过程中反相边界上的二聚体行优先成核的原因。
Metastable, monolayer-high structures as narrow as one dimer row and as long as the substrate's terrace width decorate antiphase boundaries on Si(100) following 225 eV Xe bombardment. On the basis of tunneling microscope STM observations and first-principles calculations, we propose that the bonding toplogy of a buckled dimer row on an antiphase boundary is responsible for the metastability of this zipper'' structure, and in turn for the preferential nucleation of dimer rows on antiphase boundaries during growth.