Evaluation of the Crystallinity of Grain Boundaries of Electronic Copper Thin Films for Highly Reliable Interconnections
Evaluation of the Crystallinity of Grain Boundaries of Electronic Copper Thin Films for Highly Reliable Interconnections
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高可靠互连的电子铜薄膜晶界结晶度评估
DOI：
10.1109/ectc.2012.6248981
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and Hideo Miura
中科院分区：
文献类型：
--
作者：
Naoki Saito;Naokazu Murata;Kinji Tamakawa;Ken Suzuki;and Hideo Miura
应用电子背散射衍射分析定量评价了用于电子产品中各种互连的电镀铜薄膜的晶界结晶度的变化。结果表明，在不同的电镀工艺条件下，如溶质组成、电镀温度、电镀电流密度、基体表面材料等，镀层的结晶度变化很大，在200°C以上退火后，结晶度也发生变化。薄膜结晶度的变化导致薄膜的电学和机械可靠性的急剧变化。
The change of the crystallinity of grain boundaries of the electroplated copper thin films used for the various interconnections in electronic products was evaluated quantitatively by applying an electron back-scattering diffraction analysis. It was found that the crystallinity of the electroplated films varied drastically depending on the electroplating conditions such as the composition of solute, temperature of the plating, the current density during electroplating, the surface material on the substrate, and so on. It also changed after the annealing at temperatures higher than 200°C. The change of the crystallinity of the films caused the drastic variation of both the electrical and mechanical reliability of the films.