Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs
Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs
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La2O3/InGaAs MOS 界面对 InGaAs MOSFET 性能的影响
DOI：
10.1109/ted.2017.2696741
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Member and S. Takagi
中科院分区：
文献类型：
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作者：
C.-Y. Chang;C. Yokoyama;M. Takenaka;Member and S. Takagi
系统研究了 La2O3/InGaAs MOS 界面对 InGaAs MOSFET 性能的影响。 La2O3/InGaAs MOS界面的低界面态密度(Dit)归因于InGaAs和La2O3之间形成了富含As2O3的混合层。 La2O3/InGaAs MOSFET 比 HfO2/InGaAs MOSFET 具有更小的亚阈值斜率（最小值为 93 mV/dec），并且比 Al2O3/InGaAs 和 HfO2/InGaAs MOSFET 具有更小的载流子捕获特性。在沟道迁移率分析中，发现La2O3/InGaAs MOSFET由于氧化物固定电荷密度较高而具有较高的库仑散射概率并导致沟道迁移率下降，同时具有比Al2O3/InGaAs MOSFET更小的表面粗糙度。
The impact of La2O3/InGaAs MOS interfaces on the performance of InGaAs MOSFETs is systematically investigated. The low interface state density (Dit) of La2O3/InGaAs MOS interfaces is attributable to the formation of an intermixing layer between InGaAs and La2O3, which is rich in As2O3. The La2O3/InGaAs MOSFETs exhibit smaller subthreshold slope with the minimum value of 93 mV/dec than HfO2/InGaAs MOSFETs and smaller carrier trapping properties than Al2O3/InGaAs and HfO2/InGaAs MOSFETs. In the channel mobility analysis, it is found that La2O3/InGaAs MOSFETs have higher Coulomb scattering probability due to the higher oxide fixed charge density and resulting degradation of the channel mobility, while have smaller surface roughness than Al2O3/InGaAs MOSFETs.