Influence of B-Containing Compound on Electrodeposition of Mo and W in Molten Fluoride-Oxide Electrolyte
Influence of B-Containing Compound on Electrodeposition of Mo and W in Molten Fluoride-Oxide Electrolyte
复制标题
含B化合物对熔融氟化物电解质中Mo和W电沉积的影响
DOI：
10.1149/1945-7111/aca562
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发表时间：
2022
影响因子：
3.9
通讯作者：
Zhu Hongmin
中科院分区：
文献类型：
--
作者：
Takeda Osamu;Watanabe Sakura;Iseki Chiaki;Lu Xin;Zhu Hongmin
钼（Mo）和钨（W）的生产利用超高温，导致高生产成本。如果Mo和W板可以在相对较低的温度下直接生产，则可以大幅降低成本并节省能源。已知含有氧化硼的熔融氟化物-氧化物电解质表现出对基材的良好粘附性并提供最光滑的表面;然而，氧化硼的作用尚不清楚。因此，在本研究中，研究了K2 B 4 O 7对1223 K下熔融LiF− KF− KCl− K2 MO 4（M= Mo，W）中电沉积Mo和W的影响。在不添加K2 B 4 O 7的情况下，Mo和W沉积的表观电流效率随阴极电流密度的增加而急剧下降。在Mo沉积中，加入0.1mol%K2 B 4 O 7时，表观电流效率达到100%.在W沉积中，加入5 mol%的K2 B 4 O 7时，表观电流效率达到约100%.电沉积膜包括从阴极到电解质生长的柱状晶体，并且Mo和W膜分别含有0.46摩尔%的B和0.10摩尔%的B。结果表明，随着K2 B 4 O 7的加入，沉积层的形貌由颗粒/树枝晶向平膜晶转变。
The production of molybdenum (Mo) and tungsten (W) utilizes ultra-high temperatures, resulting in high production costs. If Mo and W plates can be directly produced at relatively low temperatures, drastic cost reduction and energy savings are expected. It is known that molten fluoride-oxide electrolytes containing boron oxides exhibit good adhesion to substrates and provide the smoothest surface; however, the role of boron oxides is unclear. Therefore, in this study, the effect of K 2 B 4 O 7 on the electrodeposition of Mo and W in molten LiF− KF− KCl− K 2 MO 4 (M= Mo, W) at 1223 K was investigated. The apparent current efficiency for Mo and W deposition decreased drastically with increasing cathode current density in the absence of K 2 B 4 O 7 addition. In Mo deposition, the apparent current efficiency reached approximately 100% with the addition of 0.1 mol% K 2 B 4 O 7. In W deposition, the apparent current efficiency reached approximately 100% with the addition of 5 mol% K 2 B 4 O 7. The electrodeposited films comprised columnar crystals growing from the cathode to the electrolyte, and the Mo and W films contained 0.46 mol% of B and 0.10 mol% B, respectively. It was concluded that the morphology of deposits changed from particle/dendritic crystal to flat film crystal with the addition of K 2 B 4 O 7.