Study of planarized sputter‐deposited SiO2
Study of planarized sputter‐deposited SiO2
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溅射沉积SiO2平面化的研究
DOI：
10.1116/1.569519
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发表时间：
1978
期刊：
影响因子：
--
通讯作者：
H. G. Schaefer
中科院分区：
文献类型：
--
作者：
C. Ting;V. J. Vivalda;H. G. Schaefer
提出了一种理论模型来解释溅射沉积“平面化玻璃”的形成机理；当对衬底目标施加足够的偏压时，在金属条顶部溅射玻璃沉积过程中的地形变化，以及当衬底目标施加很少或没有偏压时溅射沉积的“标准玻璃”的现象。假设沉积速率与衬底拓扑无关，去除率是衬底表面斜率角的函数，就可以解释在“平面化玻璃”和“标准玻璃”中观察到的各种实验现象。采用了一种描绘方案，通过一步一步地显示两种溅射沉积玻璃的轮廓来支持模型。
A theoretical model is proposed to explain the mechanism of the formation of sputter‐deposited ’’planarized glass’’; a phenomenon which describes the topography change during sputter glass deposition on top of a metal strip when sufficient bias is applied to the substrate target, and the sputter‐deposited ’’standard glass’’ when little or not bias is applied to the substrate target. By assuming that the deposition rate is independent of the substrate topology, and that the removal rate is a function of the slope angle of the substrate surface, it is able to explain the various experimental phenomena observed for both ’’planarized glass’’ and ’’standard glass’’. A delineation scheme is adopted to support the model by displaying the glass contour step‐by‐step in formation of both kinds of sputter‐deposited glass.