Schottky barriers to colloidal quantum dot films
Schottky barriers to colloidal quantum dot films
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DOI：
10.1063/1.2823582
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发表时间：
2007-12-17
影响因子：
4
通讯作者：
Sargent, Edward H.
中科院分区：
文献类型：
--
作者：
Clifford, Jason P.;Johnston, Keith W.;Sargent, Edward H.
我们从实验上阐明了在金属接触和半导体胶体量子点膜的交界处形成肖特基势垒的定量物理图像。我们使用了电容-电压和温度相关的电流-电压测量相结合的方法来提取结的关键参数。三种不同工艺的Al/PbS胶体量子点结器件在室温下提供了10(4)的整流比、1.3的理想系数和最小的泄漏电流。肖特基势垒高度为0.4 eV，内建电势为0.3V，耗尽宽度为90~150 nm，受主密度为2×10(16)~7×10(16)cm(-3)。(C)2007年美国物理研究所。
We elucidate experimentally a quantitative physical picture of the Schottky barrier formed at the junction between a metallic contact and a semiconducting colloidal quantum dot film. We used a combination of capacitance-voltage and temperature-dependent current-voltage measurements to extract the key parameters of the junction. Three differently processed Al/PbS colloidal quantum dot junction devices provide rectification ratios of 10(4), ideality factors of 1.3, and minimal leakage currents at room temperature. The Schottky barrier height is 0.4 eV and the built-in potential 0.3 V. The depletion width ranges from 90 to 150 nm and the acceptor density ranges from 2x10(16) to 7x10(16) cm(-3). (c) 2007 American Institute of Physics.