Migration energy for the silicon self-interstitial
Migration energy for the silicon self-interstitial
复制标题
硅自填隙的迁移能
DOI：
10.1063/1.370719
复制
发表时间：
1999
影响因子：
3.2
通讯作者：
B. Svensson
中科院分区：
文献类型：
--
作者：
A. Hallén;N. Keskitalo;L. Josyula;B. Svensson
本文研究了1.3MeV质子辐照高纯硅产生的空位缺陷。在70 - 295 K的辐照温度下，剂量率变化，总剂量为5×109 cm-2。逆剂量率效应，即，对于增加的剂量率，室温稳定的空位相关缺陷的产生的减少也被证明是热激活的，并且涉及硅自填隙的长距离迁移。利用反剂量率效应，在室温及以下获得了0.065± 0.015eV的Si间隙迁移能。 这是对间隙迁移能的实验估计，较低的值表明电离增强扩散对Si晶体的运动是重要的。
The generation of vacancy-related point defects in low dose 1.3 MeV proton irradiated high purity silicon has been investigated. The dose rate was varied to give a total dose of 5×109 cm−2 at irradiation temperatures from 70 to 295 K. The inverse dose rate effect, i.e., a decrease in the production of room temperature stable vacancy related defects for increasing dose rates, is also shown to be thermally activated and involve long range migration of the silicon self-interstitial. The inverse dose rate effect is utilized to obtain a value of 0.065±0.015 eV for the migration energy of the Si interstitial at room temperature and below. This is an experimental estimate of the interstitial migration energy and the low value suggests that ionization enhanced diffusion is important for the motion of Si interstitials.