Hydrogen and deuterium uptake in helium implanted layer of Mo and W

Hydrogen and deuterium uptake in helium implanted layer of Mo and W
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Mo和W的氦注入层中氢和氘的吸收

DOI:
10.1016/s0022-3115(02)01581-7
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发表时间:
2003
影响因子:
3.1
通讯作者:
E. Kuramoto
E. Kuramoto
中科院分区:
工程技术2区
文献类型:
--
作者:
S. Nagata;B. Tsuchiya;N. Ohtsu;T. Sugawara;T. Shikama;K. Tokunaga;M. Takenaka;E. Kuramoto

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研究了Mo和W单晶氦(He)注入层中氢同位素的积累,重点研究了He离子高剂量照射的影响以及不同H2和D2压力下氢(H)和氘(D)的吸收行为。经10keV4He离子辐照(剂量约为2 × 1022He/m2),热处理至850K后,晶体的He饱和层发生了显著的吸氢。保留的H的积分量达到相同的值之前的热释放程序,虽然H-吸收率取决于气体压力。当在真空室中引入D2和/或D2O气体时,在He饱和层中优先吸收H。的H-和D-吸收率之间的巨大差异表明氧化物的形成在晶体表面的微观结构显着改变,由于He照射。
The accumulation of hydrogen isotopes in the helium (He) implanted layer of Mo and W single crystals was studied, focusing on the effects of the high dose irradiation of He ions and on uptake behavior of hydrogen (H) and deuterium (D) in various H2and D2pressure. A remarkable H uptake occurs in the He saturated layer of the crystals irradiated by 10 keV4He ions to a dose about 2×1022He/m2, after the heat treatment up to 850 K. The integrated amount of retained H reaches the same values before the thermal release procedure, though H-uptake rates depend on the gas pressure. The H is preferentially uptaken in the He saturated layer, when D2and/or D2O gas is introduced in the vacuum chamber. The large difference between the H- and D-uptake rates suggest the oxide formation at the crystal surface where the microstructure is significantly changed due to the He irradiation.