Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
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DOI：
10.1063/1.5026147
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发表时间：
2018-04-09
影响因子：
4
通讯作者：
Bowers, John E.
中科院分区：
文献类型：
--
作者：
Jung, Daehwan;Herrick, Robert;Bowers, John E.
研究了硅衬底上生长的1.3微米InAs量子点激光器中穿线位错密度对激光器可靠性的影响。随着线位错密度从2.8×10~(8)cm~(-2)降低到7.3×10~(6)cm~(-2)，在室温(35℃)附近进行连续波时效，激光器寿命提高了约5个数量级。我们已经获得了超过10×10(6)h的外推寿命(达到两倍初始阈值的时间)。在高温(60℃)下的加速激光老化测试表明，硅上的p调制掺杂量子点激光器比非故意掺杂的量子点激光器具有更高的可靠性。这些结果表明，外延生长的量子点激光器可能是一种在硅上实现可靠、可扩展和高效光源的可行方法。由AIP出版公司出版。
We investigate the impact of threading dislocation density on the reliability of 1.3 mu m InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 x 10(8) cm(-2) to 7.3 x 10(6) cm(-2) has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 degrees C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 x 10(6) h. An accelerated laser aging test at an elevated temperature (60 degrees C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si. Published by AIP Publishing.