ZnS:Sm grown by metalorganic chemical vapor deposition with Cl codoping
ZnS:Sm grown by metalorganic chemical vapor deposition with Cl codoping
复制标题
Cl 共掺杂金属有机化学气相沉积法生长 ZnS:Sm
DOI:
10.1063/1.364078
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发表时间:
1995
影响因子:
3.2
通讯作者:
T. Hattori
中科院分区:
文献类型:
--
作者:
A. Kato;M. Katayama;A. Mizutani;N. Ito;T. Hattori
ZnS:Tm and ZnS:Tm,Cl thin films were grown by metalorganic chemical vapor deposition (MOCVD), using diethylzinc, H2S, Tm(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedione), and HCl. The ZnS:Tm did not contain oxygen which might be introduced through the thd-radical. It thus has only codopant-free Tm3+ luminescent centers probably associated with native defects. The electroluminescence (EL) spectrum of the ZnS:Tm,Cl showed three satellite emission lines in addition to the original emission of the ZnS:Tm, indicating the existence of Tm–Cl complex centers. In contrast, the photoluminescence (PL) spectrum of the ZnS:Tm,Cl under host excitation showed no discernible satellite emission lines. Hence, though the Tm ions in the Tm–Cl complex centers are expected to be charge compensated by Cl or a certain Cl-induced defect, they are rather inactive in the PL excitation while active in the EL excitation. The same properties were observed for the MOCVD-grown ZnS:Sm and ZnS:Sm,Cl [A. Kato, M. Katayama, A. Mizutani, N. ...