Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs
Impact of Body Doping and Thickness on the Performance of Germanium-Source TFETs
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DOI：
10.1109/ted.2010.2049215
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发表时间：
2010-06
影响因子：
3.1
通讯作者：
Sung Hwan Kim;Z. Jacobson;T. Liu
中科院分区：
文献类型：
--
作者：
Sung Hwan Kim;Z. Jacobson;T. Liu
体掺杂和厚度对锗源极隧道场效应晶体管的性能的影响，其中带到带隧穿发生完全在源极区域内通过2-D器件模拟校准的实验数据进行了研究。据发现，占主导地位的泄漏机制取决于身体的设计参数值。未完全耗尽的适度掺杂（1018 cm-3）体提供最佳晶体管性能。
The impact of body doping and thickness on the performance of a germanium-source tunnel field-effect transistor in which band-to-band tunneling occurs entirely within the source region is investigated via 2-D device simulations calibrated to experimental data. It is found that the dominant leakage mechanism varies depending on the body design parameter values. A moderately doped (1018 cm-3) body that is not fully depleted provides for the best transistor performance.