Growth rate of yttria-stabilized zirconia thin films formed by electrochemical vapor-deposition using NiO as an oxygen source
Growth rate of yttria-stabilized zirconia thin films formed by electrochemical vapor-deposition using NiO as an oxygen source
复制标题
NiO作为氧源电化学气相沉积氧化钇稳定氧化锆薄膜的生长速率
DOI：
10.1016/s0167-2738(96)00560-7
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发表时间：
1997
影响因子：
3.2
通讯作者：
Z. Ogumi
中科院分区：
文献类型：
--
作者：
M. Inaba;A. Mineshige;Tomoyuki Maeda;Shinji Nakanishi;Tadayoshi Takahashi;A. Tasaka;K. Kikuchi;Z. Ogumi
