Molecular-beam epitaxy and characteristics of GaNyAs1-x-yBix -: art. no. 053505
Molecular-beam epitaxy and characteristics of GaNyAs1-x-yBix -: art. no. 053505
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DOI：
10.1063/1.2032618
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发表时间：
2005-09-01
影响因子：
3.2
通讯作者：
Yoshimoto, M
中科院分区：
文献类型：
--
作者：
Huang, W;Oe, K;Yoshimoto, M
GaNyAs 1-x-yBix合金生长的分子束外延使用固体镓，铋，砷源和氮自由基产生的氮气在射频等离子体。改变生长温度被发现是一个方便的方法，用于控制的GaBi的摩尔分数在合金中的可重复性。光致发光（PL）谱表明，GaNyAs 1-x-yBix合金的PL峰能量随着GaBi和GaN摩尔分数的增加而降低。在室温下观察到GaNyAs_（1-x-yBix）的光致发光峰能量处的红移系数分别为62 meV/%Bi和130 meV/%N。在150-300 K的温度范围内，PL峰能量的温度依赖性比InGaAsP的带隙的温度依赖性小得多。GaAs 1-xBix和GaNyAs 1-x-yBix带隙的温度系数受GaBi摩尔分数的影响，随GaBi摩尔分数的增加而减小。制备了不同发光峰能量的GaNyAs 1-x-yBix合金，并与GaAs衬底进行了晶格匹配。光致发光峰值能量位于与GaAs晶格匹配的样品的预测波长处，发现其具有Ga（N0.33Bi0.67）（z）As 1-z结构。(c)2005年美国物理学会。
GaNyAs1-x-yBix alloys were grown by molecular-beam epitaxy using solid Ga, Bi, and As sources and nitrogen radicals generated from nitrogen gas in rf plasma. Changing the growth temperature is found to be a convenient method for controlling the GaBi molar fraction in the alloy reproducibly. The photoluminescence (PL) spectra show that the PL peak energy of GaNyAs1-x-yBix alloy decreased with increasing GaBi and GaN molar fractions. The redshift coefficients of similar to 62 meV/%Bi and similar to 130 meV/%N at the PL peak energy of GaNyAs1-x-yBix were observed at room temperature. The temperature dependence of the PL peak energy in the temperature range of 150-300 K is much smaller than the temperature dependence of the band gap of InGaAsP. The temperature coefficients of GaAs1-xBix and GaNyAs1-x-yBix band gaps are governed by the GaBi molar fraction and they decrease with increasing GaBi molar fraction. GaNyAs1-x-yBix alloys with different PL peak energies and lattice matched to GaAs substrates were obtained. The photoluminescence peak energy was located at a predicted wavelength for the sample lattice matched to GaAs which was found to have the structure of Ga(N0.33Bi0.67)(z)As1-z.(c) 2005 American Institute of Physics.