Anomalous 3D nanoscale photoconduction in hybrid perovskite semiconductors revealed by tomographic atomic force microscopy
Anomalous 3D nanoscale photoconduction in hybrid perovskite semiconductors revealed by tomographic atomic force microscopy
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DOI:
10.1038/s41467-020-17012-y
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发表时间:
2020-07-03
影响因子:
16.6
通讯作者:
Huey, Bryan D.
中科院分区:
文献类型:
--
作者:
Song, Jingfeng;Zhou, Yuanyuan;Huey, Bryan D.
While grain boundaries (GBs) in conventional inorganic semiconductors are frequently considered as detrimental for photogenerated carrier transport, their exact role remains obscure for the emerging hybrid perovskite semiconductors. A primary challenge for GB-property investigations is that experimentally they need to be performed at the top surface, which is not only insensitive to depth-dependent inhomogeneities but also could be susceptible to topographic artifacts. Accordingly, we have developed a unique approach based on tomographic atomic force microscopy, achieving a fully-3D, photogenerated carrier transport map at the nanoscale in hybrid perovskites. This reveals GBs serving as highly interconnected conducting channels for carrier transport. We have further discovered the coexistence of two GB types in hybrid perovskites, one exhibiting enhanced carrier mobilities, while the other is insipid. Our approach reveals otherwise inaccessible buried features and previously unresolved conduction pathways, crucial for optimizing hybrid perovskites for various optoelectronic applications including solar cells and photodetectors. The role of grain boundaries (GBs) in halide perovskite is an interesting topic but existing investigations are limited to the top surface. Here Song et al. employ tomographic AFM to study the buried features of grains and GBs, revealing coexistence of interconnected conducting and inert GBs.