Collapse of Quantized Hall Resistance and Breakdown of IQHE in GaAs/AlGaAs Heterostructures
Collapse of Quantized Hall Resistance and Breakdown of IQHE in GaAs/AlGaAs Heterostructures
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GaAs/AlGaAs 异质结构中量子霍尔电阻的崩溃和 IQHE 的击穿
DOI：
10.1143/jpsj.67.1110
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发表时间：
1998
影响因子：
1.7
通讯作者：
T. Okamoto
中科院分区：
文献类型：
--
作者：
S. Kawaji;J. Suzuki;T. Shimada;H. Iizuka;T. Kuga;T. Okamoto
报道了GaAs/Al 0.3Ga0.7As蝶形霍尔条在高霍尔电场下的整数量子霍尔效应（IQHE）态（i =4）的量子化霍尔电阻（QHR）的崩溃，而不是由于无耗散电流的击穿. QHR崩溃时的霍尔电场F-H比无耗散电流崩溃时的F-H低约20%。讨论了F-H对QHR崩塌的影响与F-H对QHR击穿的影响的本质区别。
Collapse of quantized Hall resistance (QHR), not resulting from breakdown of the dissipationless current flow, is reported in the integer quantum Hall effect (IQHE) state with i =4 of GaAs/Al 0.3 Ga 0.7 As butterfly-type Hall bars at high Hall electric fields. The Hall electric field F H at the collapse of QHR is about 20% lower than the F H for the breakdown of the dissipationless current flow. The nature of difference between the effect of the F H on the collapse of QHR and the effect of the F H on the breakdown is discussed.