Unexpected formation of a hierarchical structure in ternary InGaAs nanowires via "one-pot" growth
Unexpected formation of a hierarchical structure in ternary InGaAs nanowires via "one-pot" growth
复制标题
通过“一锅”生长在三元 InGaAs 纳米线中意外形成分层结构
作者：
Zhou Chen;Zheng Kun;Chen Ping-Ping;Lu Wei;Zou Jin
半导体纳米线的光电应用在很大程度上取决于其纳米结构和相关的化学特性。虽然三元纳米线自发形成的核-壳结构使它们通常不可预测，但这种具有不同化学特性的多功能生长可能为拓宽其应用开辟机会。在这项研究中，我们提出了非凡的现象，观察到三元InGaAs纳米线生长的分子束外延。出乎意料地发现，纳米线在生长过程中自发地形成了分级结构：在纳米线尖端的纯核结构，在中间的核-壳结构和在底部区域的核-多壳结构。通过对纳米线生长初期的电子显微镜观察，揭示了这种独特的分级结构的生长机理。本研究为三元III-V族纳米线生长提供了新的见解，希望有助于为未来的光电器件设计新的纳米材料和纳米结构。
The optoelectronic application of semiconductor nanowires largely depends on their nanostructures and related chemical characteristics. Although the spontaneously formed core–shell structure in ternary nanowires makes them often unpredictable, such versatile growth with varied chemical characteristics may open up opportunities for widening their applications. In this study, we present extraordinary phenomena observed during ternary InGaAs nanowire growth by molecular beam epitaxy. It was unexpectedly found that nanowires spontaneously formed the hierarchical structure during the growth: a pure core structure at the nanowire tip, a core–shell structure in the middle and a core–multishell structure in the bottom region. By careful electron microscopy investigations on nanowire growth at early stages, the growth mechanism of such a unique hierarchical structure was unveiled. This study provides new insights into ternary III–V nanowire growth with the hope of assistance in designing new nanomaterials and nanostructures for future optoelectronic devices.