The photoluminescence of erbium-doped silicon monoxide
The photoluminescence of erbium-doped silicon monoxide
复制标题
掺铒一氧化硅的光致发光
DOI：
10.1016/0925-3467(96)00013-4
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
M. Hempstead
中科院分区：
文献类型：
--
作者：
S. Roberts;G. Parker;M. Hempstead
与铒共蒸发的一氧化硅薄膜在600°C退火后产生强的室温光致发光，峰值为1535 nm。衰变测量结果显示出双指数函数的寿命为0.41毫秒和2.12毫秒，这表明两个不同的光学活性铒网站。700和860 nm之间的光致发光激发光谱揭示了朝向较短波长的光致发光强度的单调增加。这一结果表明，能量从泵浦源到铒离子的转移主要是通过SiO内吸收产生的电子-空穴对（光载流子）的复合。
Films of silicon monoxide coevaporated with erbium are shown to produce strong room temperature photoluminescence peaked at 1535 nm after annealing at 600°C. Decay measurements show a double exponential function with lifetimes of 0.41 ms and 2.12 ms, suggesting two distinct optically active erbium sites. Photoluminescence excitation spectroscopy between 700 and 860 nm reveals a monotonic increase in photoluminescence intensity towards shorter wavelengths. This result suggests that the transfer of energy from the pump source to the erbium ions is mainly via the recombination of electron-hole pairs (photocarriers) which are created by absorption within the SiO.