Optical Property of Porous Silicon Produced By Metal-Assisted Etching
Optical Property of Porous Silicon Produced By Metal-Assisted Etching
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金属辅助刻蚀多孔硅的光学性能
DOI：
10.1149/06902.0185ecst
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and Shinji Yae
中科院分区：
文献类型：
--
作者：
Kano Yamakawa;Susumu Sakamoto;Naoki Fukumuro;and Shinji Yae
硅表面增反射是提高太阳能电池光电流密度的一项重要技术。近年来，多孔硅被研究用于替代氮化硅作为抗反射涂层的常用材料。在这项研究中，我们研究了多孔硅薄膜的光学性质，比掺杂层更薄，用于形成硅太阳能电池的pn结，由金属辅助蚀刻生产。多孔硅的结构随催化银纳米颗粒的大小、蚀刻液的组成和蚀刻时间的变化而变化。多孔膜形成的硅晶片的反射率远低于镜面抛光的硅晶片。反射光谱和椭偏分析表明，多孔硅薄膜具有光学特性，有望成为晶体硅太阳能电池的理想电弧。
Antireflection of Si surface is an important technology to increase the photocurrent density of solar cells. Recently, porous Si has been researched for replacing Si nitride which is common material of antireflective coating (ARC). In this study, we have investigated the optical properties of porous Si thin films, thinner than doped layers for pn junction formation of Si solar cells, produced by metal-assisted etching. The structure of porous Si is changed with the size of catalytic Ag nanoparticles, composition of etching solution, and etching time. The reflection of porous film formed Si wafers is much lower than that of mirror polished wafers. Reflectance spectra and ellipsometric analysis indicate that the thin porous Si films act as optical films and they are expected to function as suitable ARC for crystalline Si solar cells.