Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast
Scanning electron microscopy imaging of dislocations in bulk materials, using electron channeling contrast
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使用电子通道对比度对块体材料中的位错进行扫描电子显微镜成像
DOI：
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发表时间：
2006
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通讯作者：
M. Crimp
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文献类型：
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作者：
M. Crimp
位错的成像和表征通常通过使用衍射衬度成像的薄箔透射电子显微镜（TEM）进行。然而，薄箔的方法是有限的困难的样品制备，薄箔文物，相对较小的可视区域，并进行原位研究的约束。电子沟道衬度成像（ECCI）的电子沟道成像提供了用于成像包括位错的晶体缺陷的替代方法。由于ECCI是用场发射枪扫描电子显微镜（FEG-SEM）使用块状样品进行的，因此克服了TEM薄箔分析的许多局限性。本文概述了电子沟道模式和沟道成像的发展到目前的技术水平。进行常规沟道成像所需的实验参数和设置进行审查。沿着一些例子说明了ECCI在薄箔TEM上的一些优点，并讨论了对缺陷结构进行沟道对比分析的一些局限性。Microsc. Res. Tech. 69：374-381，2006.© 2006 Wiley利斯公司
The imaging and characterization of dislocations is commonly carried out by thin foil transmission electron microscopy (TEM) using diffraction contrast imaging. However, the thin foil approach is limited by difficult sample preparation, thin foil artifacts, relatively small viewable areas, and constraints on carrying out in situ studies. Electron channeling imaging of electron channeling contrast imaging (ECCI) offers an alternative approach for imaging crystalline defects, including dislocations. Because ECCI is carried out with field emission gun scanning electron microscope (FEG‐SEM) using bulk specimens, many of the limitations of TEM thin foil analysis are overcome. This paper outlines the development of electron channeling patterns and channeling imaging to the current state of the art. The experimental parameters and set up necessary to carry out routine channeling imaging are reviewed. A number of examples that illustrate some of the advantages of ECCI over thin foil TEM are presented along with a discussion of some of the limitations on carrying out channeling contrast analysis of defect structures. Microsc. Res. Tech. 69:374–381, 2006. © 2006 Wiley‐Liss, Inc.